mixers - doubl e -balanc e d - ch i p 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC774 gaas mmic fund am ent a l m i xer, 7 - 43 ghz v00.1109 general d escription features functional d iagram passive: no dc bias r equired high i nput i p3: +22 dbm high lo/ r f i solation: 35 db wide i f bandwidth: dc - 10 ghz upconversion & downconversion applications die s ize: 1.36 x 0.96 x 0.1 mm e lectrical specifcations, t a = +25 c, if = 0.5 ghz, l o = +13 dbm* t ypical applications the h m c774 is ideal for: ? point-to-point r adios ? point-to- m ulti-point r adios & v s at ? test e quipment & s ensors ? m ilitary e nd-use the h m c774 is a general purpose double balanced mixer chip that can be used as an upconverter or downconverter between 7 and 43 ghz. this mixer requires no external components or matching cir- cuitry. the h m c774 provides excellent lo to r f and lo to i f isolation due to optimized balun structures. the mixer operates with lo drive levels of +13 dbm. the h m c774 wideband mixer exhibits consistent conversion gain and compression across its band- width. the h m c774 is also available in sm t format as the h m c774lc3b. parameter m in. typ. m ax. m in. typ. m ax. units frequency r ange, r f & lo 7 - 22 22 - 43 ghz frequency r ange, i f dc - 10 dc - 10 ghz conversion loss 9 13 10 13 db lo to r f i solation 35 38 db lo to i f i solation 20 30 25 40 db r f to i f i solation 7 10 14 20 db i p3 ( i nput) 20 22 dbm i p2 ( i nput) 45 48 dbm 1 db gain compression ( i nput) 12 13 dbm * unless otherwise noted, all measurements performed as downconverter, if = 0.5 ghz, lo = +13 dbm
mixers - doubl e -balanc e d - ch i p 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com conversion gain vs. t emperature conversion gain vs. l o d rive isolation if bandwidth r eturn l oss u pconverter performance conversion gain vs. l o d rive HMC774 v00.1109 gaas mmic fund am ent a l m i xer, 7 - 43 ghz -20 -16 -12 -8 -4 0 6 10 14 18 22 26 30 34 38 42 46 +25 c +85 c -55 c rf frequency (ghz) conversion gain (db) -20 -16 -12 -8 -4 0 6 10 14 18 22 26 30 34 38 42 46 11 dbm 13 dbm 15 dbm 17 dbm rf frequency (ghz) conversion gain (db) -24 -20 -16 -12 -8 -4 0 0 2 4 6 8 10 12 conversion gain if return loss response (db) if frequency (ghz) -60 -50 -40 -30 -20 -10 0 6 10 14 18 22 26 30 34 38 42 46 lo/rf rf/if lo/if frequency (ghz) isolation (db) -20 -15 -10 -5 0 6 10 14 18 22 26 30 34 38 42 46 rf lo frequency (ghz) return loss (db) -20 -16 -12 -8 -4 0 6 10 14 18 22 26 30 34 38 42 46 11 dbm 13 dbm 15 dbm 17 dbm rf frequency (ghz) conversion gain (db)
mixers - doubl e -balanc e d - ch i p 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com input ip2 vs. t emperature [1] input ip3 vs. l o d rive [1] input ip3 vs. t emperature [1] input ip2 vs. l o d rive [1] [1] two-tone input power = -5 dbm each tone, 1 mhz spacing. input p1db vs. t emperature HMC774 v00.1109 gaas mmic fund am ent a l m i xer, 7 - 43 ghz 0 5 10 15 20 25 30 35 6 10 14 18 22 26 30 34 38 42 46 11 dbm 13 dbm 15 dbm 17 dbm rf frequency (ghz) ip3 (dbm) 10 20 30 40 50 60 70 6 10 14 18 22 26 30 34 38 42 46 11 dbm 13 dbm 15 dbm 17 dbm rf frequency (ghz) ip2 (dbm) 0 4 8 12 16 20 6 10 14 18 22 26 30 34 38 42 46 +25 c +85 c -55 c rf frequency (ghz) p1db (dbm) 0 5 10 15 20 25 30 35 6 10 14 18 22 26 30 34 38 42 46 +25 c +85 c -55 c rf frequency (ghz) ip3 (dbm) 10 20 30 40 50 60 70 6 10 14 18 22 26 30 34 38 42 46 +25 c +85 c -55 c rf frequency (ghz) ip2 (dbm)
mixers - doubl e -balanc e d - ch i p 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mx n spurious outputs nlo m r f 0 1 2 3 4 0 xx 10 39 xx xx 1 5 0 37 43 xx 2 30 49 47 55 68 3 xx 74 62 45 63 4 xx xx xx 77 71 r f = 17.5 ghz @ -10 dbm lo = 18.0 ghz @ +15 dbm all values in dbc below the i f output power level. absolute maximum r atings rf / if input 21 dbm lo drive 27 dbm channel temperature 150 c continuous pdiss (ta = 85 c) (derate 2.9 mw/c above 85 c) 189 mw thermal r esistance (junction to die bottom) 343 c/w s torage temperature -65 to +150 c operating temperature -55 to +85 c e l e ct ro s tat ic se n si t i v e de v ic e ob ser v e handl i ng p re caut i on s outline d rawing HMC774 v00.1109 gaas mmic fund am ent a l m i xer, 7 - 43 ghz
mixers - doubl e -balanc e d - ch i p 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com pad number function description i nterface schematic 1 lo this pin is dc coupled and matched to 50 ohms. 2 rf this pin is dc coupled and matched to 50 ohms. 3 if this pin is dc coupled. for applications not requiring operation to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary i f frequency range. for operation to dc, this pin must not source or sink more than 2 ma of current or part non-function and possible part failure will result. pad d escriptions assembly d iagram HMC774 v00.1109 gaas mmic fund am ent a l m i xer, 7 - 43 ghz
mixers - doubl e -balanc e d - ch i p 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC774 v00.1109 gaas mmic fund am ent a l m i xer, 7 - 43 ghz mounting & bonding t echniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see h m c general handling, m ounting, bonding note). 50 ohm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing r f to and from the chip (figure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the sur- face of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). m icrostrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on r f, lo & i f ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based es d protective containers, and then sealed in an es d protective bag for shipment. once the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow es d precautions to protect against > 250v es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding r f bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004) thick gaas mmic 3 mil ribbon bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic 3 mil ribbon bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab
|
